收藏本站
AN816
Vishay Siliconix
Dual-Channel LITTLE FOOT R 6-Pin SC-70 MOSFET
Copper Leadframe Version
Recommended Pad Pattern and Thermal Performance
INTRODUCTION
26 (mil)
87 (mil)
The new dual 6-pin SC-70 package with a copper leadframe
enables improved on-resistance values and enhanced
thermal performance as compared to the existing 3-pin and
6-pin packages with Alloy 42 leadframes. These devices are
intended for small to medium load applications where a
miniaturized package is required. Devices in this package
come in a range of on-resistance values, in n-channel and
p-channel versions. This technical note discusses pin-outs,
package outlines, pad patterns, evaluation board layout, and
thermal performance for the dual-channel version.
96 (mil)
71 (mil)
23 (mil)
6
5
4
48 (mil)
61 (mil)
PIN-OUT
0.0 (mil)
1
2
3
Figure 1 shows the pin-out description and Pin 1 identification
for the dual-channel SC-70 device in the 6-pin configuration.
Both n-and p-channel devices are available in this package –
the drawing example below illustrates the p-channel device.
8 (mil)
26 (mil)
16 (mil)
SOT-363
SC-70 (6-LEADS)
FIGURE 2.
SC-70 (6 leads) Dual
S 1
G 1
1
2
6
5
D 1
G 2
EVALUATION BOARD FOR THE DUAL-
CHANNEL SC70-6
D 2
3
Top View
FIGURE 1.
4
S 2
The 6-pin SC-70 evaluation board (EVB) shown in Figure 3
measures 0.6 in. by 0.5 in. The copper pad traces are the same
as described in the previous section, Basic Pad Patterns . The
board allows for examination from the outer pins to the 6-pin
DIP connections, permitting test sockets to be used in
evaluation testing.
For package dimensions see outline drawing SC-70 (6-Leads)
( http://www.vishay.com/doc?71154 )
BASIC PAD PATTERNS
See Application Note 826, Recommended Minimum Pad
Patterns With Outline Drawing Access for Vishay Siliconix
MOSFET s, ( http://www.vishay.com/doc?72286 ) for the SC-70
6-pin basic pad layout and dimensions. This pad pattern is
sufficient for the low-power applications for which this package
is intended. Increasing the drain pad pattern (Figure 2) yields
a reduction in thermal resistance and is a preferred footprint.
Document Number: 71405
12-Dec-03
The thermal performance of the dual 6-pin SC-70 has been
measured on the EVB, comparing both the copper and Alloy
42 leadframes. This test was then repeated using the 1-inch 2
PCB with dual-side copper coating.
A helpful way of displaying the thermal performance of the
6-pin SC-70 dual copper leadframe is to compare it to the
traditional Alloy 42 version.
www.vishay.com
1
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI1563EDH-T1-GE3 MOSFET N/P-CH 20V SC70-6
SI1900DL-T1-E3 MOSFET N-CH DUAL 30V SC70-6
SI1902DL-T1-GE3 MOSFET N-CH G-S 20V DUAL SC-70-6
SI1926DL-T1-E3 MOSF N CH DUAL D-S 60V SC-70-6
SI1967DH-T1-E3 MOSFET 2P-CH 20V 1.3A SC70-6
SI1970DH-T1-GE3 MOSFET N-CH DUAL 30V SC70-6
SI2300DS-T1-GE3 MOSFET N-CH 30V SOT-23
SI2302CDS-T1-GE3 MOSFET N-CH 20V 2.6A SOT23-3
相关代理商/技术参数
SI1563DH 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Complementary 20-V (D-S) Low-Threshold MOSFET
SI1563DH_08 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Complementary 20-V (D-S) Low-Threshold MOSFET
SI1563DH_10 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Complementary 20 V (D-S) Low-Threshold MOSFET
SI1563DH-T1 功能描述:MOSFET 20V 1.28/1.0A 0.48W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI1563DH-T1-E3 功能描述:MOSFET 20V 1.28/1.0A 16 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI1563DH-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET
SI1563DH-T1-E3/BKN 制造商:Vishay Siliconix 功能描述:Complementary 20V Low-Threshold MOSFET
SI1563DH-T1-GE3 功能描述:MOSFET N/P-CH 20V SC70-6 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:TrenchFET® 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR